b,dec,2011 to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SC2120 transistor (npn) features z high dc current gain z complementary to 2sa950 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 0.1 a collector cut-off current i ceo v ce =25v,i b =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =1v, i c =100ma 100 320 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =20ma 0.5 v base-emitter voltage v be v ce =1v, i c =10ma 0.8 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 13 pf transition frequency f t v ce =5v,i c =10ma 100 mhz classification of h fe rank o y range 100-200 160-320 symbol parameter value unit v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 0.8 a p c collector power dissipation 600 mw r ja thermal resistance from junction to ambient 208 / w t j junction temperature 150 t stg storage temperature -55~+150 tiger electronic co.,ltd
1 10 100 10 100 1000 1 10 100 10 100 0.1 1 10 1 11 01 0 0 10 100 0 25 50 75 100 125 150 0 200 400 600 800 0.2 0.4 0.6 0.8 1.0 1 10 100 1 10 100 0.1 1 0.0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 200 800 f t ?? i c h fe ?? common emitter v ce =1v 3 30 300 t a =100 t a =25 dc current gain h fe collector current i c (ma) i c 2 800 =25 30 300 30 3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) t a =25 t a =100 i c v cesat ?? 600 300 100 30 10 3 3 0.3 20 c ob c ib reverse voltage v (v) f=1mhz i e =0/ i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) 500 3 30 v ce =5v t a =25 transition frequency f t (mhz) collector current i c (ma) t a 2SC2120 typical characterisitics collector power dissipation pc (mw) ambient temperature t a ( ) p c ?? 300 v be i c ?? 30 3 800 t a =25 t a =100 common emitter v ce =1v collector current i c (ma) base-emmiter voltage v be (v) 800 30 3 =25 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 300 i c v besat ?? static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 1ma 900ua 800ua 700ua 600ua 500ua 400ua 300ua 200ua i b =100ua common emitter t a =25 b,dec,2011
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